STMicroelectronics SCT30N120 MOSFETs
SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT30N120
Detailed Description
SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247
Package
HiP247™
Lifecycle Status
Obsolete
Datasheet
SCT30N120 Datasheet
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Technical Specifications
STMicroelectronics SCT30N120 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2.6V @ 1mA (Typ)
Gate Charge Qg Max Vgs
105 nC @ 20 V
Vgs Max
+25V, -10V
Input Capacitance Ciss Max Vds
1700 pF @ 400 V
Fet Type
N-Channel
Power Dissipation Max
270W (Tc)
Alternate Parts Comparison (SCT30N120 vs SCT10N120AG vs SCT040H65G3AG vs SCT20N120)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-263-8, D2PAK | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 40A (Tc) | 12A (Tc) | 30A (Tc) | 20A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 105 nC @ 20 V | 22 nC @ 20 V | 39.5 nC @ 18 V | 45 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 1700 pF @ 400 V | 290 pF @ 400 V | 920 pF @ 400 V | 650 pF @ 400 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package