STMicroelectronics SCT10N120AG MOSFETs
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT10N120AG
Base Model
Detailed Description
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Active
Datasheet
SCT10N120AG Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCT10N120AG MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
22 nC @ 20 V
Vgs Max
+25V, -10V
Input Capacitance Ciss Max Vds
290 pF @ 400 V
Power Dissipation Max
150W (Tc)
Fet Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Alternate Parts Comparison (SCT10N120AG vs SCT10N120 vs SCT20N120 vs SCT1000N170)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Obsolete | Obsolete | Active |
| Current Continuous Drain ID 25 C | 12A (Tc) | 12A (Tc) | 20A (Tc) | 7A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 1200 V | 1700 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 20V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 22 nC @ 20 V | 22 nC @ 20 V | 45 nC @ 20 V | 13.3 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 290 pF @ 400 V | 290 pF @ 400 V | 650 pF @ 400 V | 133 pF @ 1000 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT10N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.