STMicroelectronics SCTW100N65G2AG MOSFETs
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTW100N65G2AG
Detailed Description
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Active
Datasheet
SCTW100N65G2AG Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTW100N65G2AG MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
SICFET N-CH 650V 100A HIP247
Detailed Description
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
Gate Charge Qg Max Vgs
162 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3315 pF @ 520 V
Power Dissipation Max
420W (Tc)
Alternate Parts Comparison (SCTW100N65G2AG vs SCTW70N120G2V vs SCTW90N65G2V vs SCTW35N65G2V)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 100A (Tc) | 91A (Tc) | 90A (Tc) | 45A (Tc) |
| Description | SICFET N-CH 650V 100A HIP247 | TRANS SJT N-CH 1200V 91A HIP247 | SICFET N-CH 650V 90A HIP247 | SICFET N-CH 650V 45A HIP247 |
| Detailed Description | N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™ | N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™ | N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™ | N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 650 V | 1200 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 18V | 18V, 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 162 nC @ 18 V | 150 nC @ 18 V | 157 nC @ 18 V | 73 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 3315 pF @ 520 V | 3540 pF @ 800 V | 3300 pF @ 400 V | 1370 pF @ 400 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
SCTW35N65G2VSTMicroelectronicsSilicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package