STMicroelectronics SCT20N120 MOSFETs
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT20N120
Detailed Description
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Obsolete
Datasheet
SCT20N120 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCT20N120 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Description
SICFET N-CH 1200V 20A HIP247
Detailed Description
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™
Vgs Th Max ID
3.5V @ 1mA
Gate Charge Qg Max Vgs
45 nC @ 20 V
Vgs Max
+25V, -10V
Input Capacitance Ciss Max Vds
650 pF @ 400 V
Alternate Parts Comparison (SCT20N120 vs SCT10N120AG vs SCT040H65G3AG vs SCT1000N170)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-263-8, D2PAK | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 20A (Tc) | 12A (Tc) | 30A (Tc) | 7A (Tc) |
| Description | SICFET N-CH 1200V 20A HIP247 | SICFET N-CH 1200V 12A HIP247 | AUTOMOTIVE-GRADE SILICON CARBIDE | HIP247 IN LINE |
| Detailed Description | N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ | N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™ | N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7 | N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 650 V | 1700 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 45 nC @ 20 V | 22 nC @ 20 V | 39.5 nC @ 18 V | 13.3 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 650 pF @ 400 V | 290 pF @ 400 V | 920 pF @ 400 V | 133 pF @ 1000 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
SCTW35N65G2VSTMicroelectronicsSilicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package