STMicroelectronics SCTW90N65G2V MOSFETs
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTW90N65G2V
Detailed Description
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Active
Datasheet
SCTW90N65G2V Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTW90N65G2V MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
157 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3300 pF @ 400 V
Fet Type
N-Channel
Power Dissipation Max
390W (Tc)
Alternate Parts Comparison (SCTW90N65G2V vs SCTW100N65G2AG vs SCTW35N65G2V vs SCTW40N120G2VAG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Current Continuous Drain ID 25 C | 90A (Tc) | 100A (Tc) | 45A (Tc) | 33A (Tc) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 650 V | 650 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 18V, 20V | 18V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 157 nC @ 18 V | 162 nC @ 18 V | 73 nC @ 20 V | 63 nC @ 18 V |
| Input Capacitance Ciss Max Vds | 3300 pF @ 400 V | 3315 pF @ 520 V | 1370 pF @ 400 V | 1230 pF @ 800 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package