STMicroelectronics SCT1000N170 MOSFETs
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT1000N170
Detailed Description
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Active
Datasheet
SCT1000N170 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCT1000N170 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
HIP247 IN LINE
Detailed Description
N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™
Vgs Th Max ID
3.5V @ 1mA
Gate Charge Qg Max Vgs
13.3 nC @ 20 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
133 pF @ 1000 V
Alternate Parts Comparison (SCT1000N170 vs SCT10N120AG vs SCT040H65G3AG vs SCT20N120)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-263-8, D2PAK | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 7A (Tc) | 12A (Tc) | 30A (Tc) | 20A (Tc) |
| Description | HIP247 IN LINE | SICFET N-CH 1200V 12A HIP247 | AUTOMOTIVE-GRADE SILICON CARBIDE | SICFET N-CH 1200V 20A HIP247 |
| Detailed Description | N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™ | N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™ | N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7 | N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 1700 V | 1200 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 13.3 nC @ 20 V | 22 nC @ 20 V | 39.5 nC @ 18 V | 45 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 133 pF @ 1000 V | 290 pF @ 400 V | 920 pF @ 400 V | 650 pF @ 400 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCTW35N65G2VSTMicroelectronicsSilicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package