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Transistors

Transistors are three-terminal semiconductor devices used for signal amplification, switching, and voltage regulation. This category covers BJTs (NPN/PNP), MOSFETs (N-channel/P-channel), JFETs, IGBTs, and RF transistors from Infineon, onsemi, Nexperia, Vishay, STMicroelectronics, and Toshiba.

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16,493+Products
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Product Series & Base Models

Navigate by model series to compare ordering variants and technical specifications within the Transistors family.

Nexperia
2 Variants

PMV75UP

PMV75UP variants from Nexperia

Nexperia
2 Variants

PMV56XN

PMV56XN variants from Nexperia

Nexperia
2 Variants

PMV250EPEA

PMV250EPEA variants from Nexperia

Nexperia
2 Variants

PMF170XP

PMF170XP variants from Nexperia

Nexperia
2 Variants

PMDPB55XP

PMDPB55XP variants from Nexperia

Nexperia
2 Variants

PMBF170

PMBF170 variants from Nexperia

Nexperia
2 Variants

NX7002AKW

NX7002AKW variants from Nexperia

Texas Instruments
2 Variants

CSD25485F

CSD25485F variants from Texas Instruments

Texas Instruments
2 Variants

CSD25481F

CSD25481F variants from Texas Instruments

Texas Instruments
2 Variants

CSD17585F

CSD17585F variants from Texas Instruments

Texas Instruments
2 Variants

CSD17484F

CSD17484F variants from Texas Instruments

Texas Instruments
2 Variants

CSD17483F

CSD17483F variants from Texas Instruments

Texas Instruments
2 Variants

CSD13385F

CSD13385F variants from Texas Instruments

Texas Instruments
2 Variants

CSD13380F

CSD13380F variants from Texas Instruments

Nexperia
2 Variants

BSS84

BSS84 variants from Nexperia

Nexperia
2 Variants

BSS192

BSS192 variants from Nexperia

Nexperia
2 Variants

BSS123

BSS123 variants from Nexperia

Nexperia
2 Variants

BSP225

BSP225 variants from Nexperia

Nexperia
2 Variants

BSP220

BSP220 variants from Nexperia

Nexperia
3 Variants

BSH205G

BSH205G variants from Nexperia

Nexperia
2 Variants

BSH105

BSH105 variants from Nexperia

Nexperia
2 Variants

2N7002B

2N7002B variants from Nexperia

Nexperia
11 Variants

2N7002

2N7002 variants from Nexperia

Browse Transistors Products

Showing 1–10 of 16,493 products
PART NUMBERMANUFACTURERDESCRIPTIONSTOCKQTY / ACTION
IRF4905STRLPBFInfineon TechnologiesMOSFET P-CH 55V 42A D2PAK [Active | RoHS Compliant].29,543
2N7002-7-FDiodes IncorporatedMOSFET N-CH 60V 115MA SOT23-3 [SOT-23-3 | Active | RoHS Compliant].4,140,000
BSS138LT1GonsemiN-CH MOSFET 50V 0.2A 3.5R SOT-23 T/R [Active | RoHS Compliant].519,920
BC817-25Q-7-FDiodes IncorporatedTRANS NPN 45V 0.5A SOT23-3 [SOT-23-3 | Active | RoHS3 Compliant].14,830
IPTG007N06NM5ATMA1Infineon TechnologiesMOSFET N-CH 60V 53A/454A HSOG-8 [HSOF-8 | Active | RoHS Compliant].34,200
SIRA32DP-T1-RE3VishayTrans MOSFET N-CH 25V 185A 8-Pin PowerPAK SO EP T/R16,430
NTD5867NLT4GonsemiN-Ch Power MOSFET, 60V, 20A, 39mΩ, DPAK, Logic Level7,500
55GN01CA-TB-Eonsemionsemi 55GN01CA-TB-E [CP | Active | RoHS Compliant].5,878

About Transistors

Transistors are three-terminal active semiconductor devices designed for signal amplification, electronic switching, and voltage regulation, acting as the fundamental building blocks of all modern analog and digital electronics. By utilizing a small input voltage or current to control a much larger output current flow, transistors serve as solid-state switches in power stages and high-fidelity amplifiers in signal chains.

This broad category encompasses Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Junction Field-Effect Transistors (JFETs), and RF power transistors. Selection criteria depend on operating current (A), breakdown voltage (V), switching speed, on-resistance or saturation voltage, thermal dissipation properties, and package footprints (SOT-23, TO-220, D2PAK, DFN).

Octatronics indexes tens of thousands of transistor part numbers from market pioneers including Infineon Technologies, onsemi, Nexperia, Vishay, STMicroelectronics, and Toshiba. Check specifications, verify stock, and submit bulk RFQs online.

Frequently Asked Questions

Octatronics can help source a wide range of Transistors from major manufacturers worldwide, including active production parts, long-lead-time items, and hard-to-find components.

Yes. You can submit a single part number or upload a BOM with multiple parts. Our team will check stock, date code, lead time, and pricing for each item.

Availability depends on the specific part number and supplier source. For important orders, buyers can request packaging photos, labels, date code information, and traceability documents.

Yes. Octatronics supports sourcing for active, end-of-life, obsolete, and hard-to-find components through our global supplier network.

Please provide the part number, manufacturer, quantity, required date code, target price, delivery country, and whether original packaging or COC is required.

Articles & Technology

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AD629 Alternatives and Equivalents: INA149 vs INA117 vs AD8479

AD629 Alternatives and Equivalents: INA149 vs INA117 vs AD8479

Compare AD629 alternatives INA149, INA117 and AD8479 by common-mode range, CMRR, bandwidth, supply voltage, pinout and package.

2026-07-14
PNP vs NPN vs P-Channel MOSFET: How to Choose the Right Transistor for Switching Circuits

PNP vs NPN vs P-Channel MOSFET: How to Choose the Right Transistor for Switching Circuits

PNP, NPN, and MOSFET transistors are widely used for electronic switching and control applications, but each device has different operating principles and performance characteristics. This guide explains the key differences between PNP vs NPN vs MOSFET, including switching behavior, efficiency, applications, and how engineers select the right transistor for different circuit designs.

2026-07-07
MOSFET vs BJT: Key Differences, Working Principles, and Engineering Selection Guide

MOSFET vs BJT: Key Differences, Working Principles, and Engineering Selection Guide

MOSFET and BJT are two fundamental transistor technologies used in electronic circuits. This guide explains the key differences between MOSFET vs BJT, including control methods, switching speed, efficiency, thermal behavior, and real-world applications. Learn how engineers select the right transistor for different circuit designs.

2026-07-07
PNP Bipolar Junction Transistor (BJT): Definition, Working Principle, and Core Electronics Concepts

PNP Bipolar Junction Transistor (BJT): Definition, Working Principle, and Core Electronics Concepts

The PNP bipolar junction transistor is a current-controlled semiconductor device used in switching and amplification. This guide explains its working principle, structure, biasing behavior, and differences compared to NPN transistors in a clear, structured format for electronics learners and engineers.

2026-07-06
Field Emission Transistor Explained: Vacuum FETs, Field Emission Devices, and How They Differ from FETs

Field Emission Transistor Explained: Vacuum FETs, Field Emission Devices, and How They Differ from FETs

A field emission transistor is a device concept that uses strong electric fields to extract electrons from an emitter, often through quantum tunneling, and then controls or collects those electrons using nearby electrodes. Unlike a conventional field effect transistor, which controls current through a semiconductor channel, many field emission transistor concepts are related to vacuum electronics, vacuum field emission transistors, nanoscale vacuum channel transistors, and advanced field emission devices.

2026-06-28
What Is a Field Effect Transistor? FET Types, Working Principle, Applications, and Selection Guide

What Is a Field Effect Transistor? FET Types, Working Principle, Applications, and Selection Guide

A Field Effect Transistor, commonly called a FET, is a voltage-controlled semiconductor device that uses an electric field to control current flow between two terminals called the source and drain. Unlike bipolar junction transistors, which require input current at the base, FETs are controlled mainly by voltage at the gate terminal. This gives FETs high input impedance, low control power, and strong advantages in switching, amplification, power management, RF circuits, sensor interfaces, and modern integrated circuits.

2026-06-28