STMicroelectronics SCT040H65G3AG MOSFETs
AUTOMOTIVE-GRADE SILICON CARBIDE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT040H65G3AG
Detailed Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Package
H2PAK-7
Lifecycle Status
Active
Datasheet
SCT040H65G3AG Datasheet
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Technical Specifications
STMicroelectronics SCT040H65G3AG MOSFETs technical specifications.
General
Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Description
AUTOMOTIVE-GRADE SILICON CARBIDE
Detailed Description
N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7
Gate Charge Qg Max Vgs
39.5 nC @ 18 V
Vgs Max
+18V, -5V
Input Capacitance Ciss Max Vds
920 pF @ 400 V
Power Dissipation Max
221W (Tc)
Alternate Parts Comparison (SCT040H65G3AG vs SCT20N120 vs SCT1000N170 vs SCT10N120AG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-8, D2PAK | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Continuous Drain ID 25 C | 30A (Tc) | 20A (Tc) | 7A (Tc) | 12A (Tc) |
| Description | AUTOMOTIVE-GRADE SILICON CARBIDE | SICFET N-CH 1200V 20A HIP247 | HIP247 IN LINE | SICFET N-CH 1200V 12A HIP247 |
| Detailed Description | N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7 | N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ | N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™ | N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 650 V | 1200 V | 1700 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 15V, 18V | 20V | 20V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 39.5 nC @ 18 V | 45 nC @ 20 V | 13.3 nC @ 20 V | 22 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 920 pF @ 400 V | 650 pF @ 400 V | 133 pF @ 1000 V | 290 pF @ 400 V |
| Action |
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