STMicroelectronics SCT10N120 MOSFETs
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCT10N120
Base Model
Detailed Description
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Obsolete
Datasheet
SCT10N120 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCT10N120 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Description
SICFET N-CH 1200V 12A HIP247
Detailed Description
N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™
Vgs Th Max ID
3.5V @ 250µA
Gate Charge Qg Max Vgs
22 nC @ 20 V
Vgs Max
+25V, -10V
Input Capacitance Ciss Max Vds
290 pF @ 400 V
Alternate Parts Comparison (SCT10N120 vs SCT10N120AG vs SCT040H65G3AG vs SCT20N120)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-263-8, D2PAK | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 12A (Tc) | 12A (Tc) | 30A (Tc) | 20A (Tc) |
| Description | SICFET N-CH 1200V 12A HIP247 | SICFET N-CH 1200V 12A HIP247 | AUTOMOTIVE-GRADE SILICON CARBIDE | SICFET N-CH 1200V 20A HIP247 |
| Detailed Description | N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™ | N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™ | N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7 | N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 650 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 15V, 18V | 20V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 22 nC @ 20 V | 22 nC @ 20 V | 39.5 nC @ 18 V | 45 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 290 pF @ 400 V | 290 pF @ 400 V | 920 pF @ 400 V | 650 pF @ 400 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT10N120AGSTMicroelectronicsAutomotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.