STMicroelectronics SCTW35N65G2V MOSFETs
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTW35N65G2V
Detailed Description
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Obsolete
Datasheet
SCTW35N65G2V Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTW35N65G2V MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Description
SICFET N-CH 650V 45A HIP247
Detailed Description
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Gate Charge Qg Max Vgs
73 nC @ 20 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
1370 pF @ 400 V
Power Dissipation Max
240W (Tc)
Alternate Parts Comparison (SCTW35N65G2V vs SCTW70N120G2V vs SCTW90N65G2V vs SCTW100N65G2AG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 45A (Tc) | 91A (Tc) | 90A (Tc) | 100A (Tc) |
| Description | SICFET N-CH 650V 45A HIP247 | TRANS SJT N-CH 1200V 91A HIP247 | SICFET N-CH 650V 90A HIP247 | SICFET N-CH 650V 100A HIP247 |
| Detailed Description | N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™ | N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™ | N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™ | N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 650 V | 1200 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 18V, 20V | 18V | 18V | 18V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 73 nC @ 20 V | 150 nC @ 18 V | 157 nC @ 18 V | 162 nC @ 18 V |
| Input Capacitance Ciss Max Vds | 1370 pF @ 400 V | 3540 pF @ 800 V | 3300 pF @ 400 V | 3315 pF @ 520 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package