STMicroelectronics SCTW40N120G2VAG MOSFETs
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SCTW40N120G2VAG
Detailed Description
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
Package
HiP247™
Lifecycle Status
Active
Datasheet
SCTW40N120G2VAG Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics SCTW40N120G2VAG MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
SICFET N-CH 1200V 33A HIP247
Detailed Description
N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™
Gate Charge Qg Max Vgs
63 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
1230 pF @ 800 V
Power Dissipation Max
290W (Tc)
Alternate Parts Comparison (SCTW40N120G2VAG vs SCTW70N120G2V vs SCTW90N65G2V vs SCTW100N65G2AG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) | -55°C ~ 200°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 33A (Tc) | 91A (Tc) | 90A (Tc) | 100A (Tc) |
| Description | SICFET N-CH 1200V 33A HIP247 | TRANS SJT N-CH 1200V 91A HIP247 | SICFET N-CH 650V 90A HIP247 | SICFET N-CH 650V 100A HIP247 |
| Detailed Description | N-Channel 1200 V 33A (Tc) 290W (Tc) Through Hole HiP247™ | N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™ | N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™ | N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™ |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 18V | 18V | 18V | 18V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 63 nC @ 18 V | 150 nC @ 18 V | 157 nC @ 18 V | 162 nC @ 18 V |
| Input Capacitance Ciss Max Vds | 1230 pF @ 800 V | 3540 pF @ 800 V | 3300 pF @ 400 V | 3315 pF @ 520 V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SCT20N120STMicroelectronicsSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
SCTW100N65G2AGSTMicroelectronicsAutomotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ.
SCT1000N170STMicroelectronicsSilicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package