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Microsemi TAN250A RF BJT

TAN250A by Microsemi · RF BJT · 55AW

In StockMicrosemi55AW
TAN250A 55AW package illustration

Same model may have multiple batches, images only for reference.

TAN250A
Manufacturer
Part Number (MPN)
TAN250A
Package
55AW
Lifecycle Status
Obsolete
Datasheet
PDF TAN250A Datasheet
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Technical Specifications

Microsemi TAN250A RF BJT technical specifications.

General

RoHS
Compliant
Number of Pins
3
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Voltage Vceo
60 V
Current Collector IC Max
30 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V

Alternate Parts Comparison (TAN250A vs TAN150 vs TAN350 vs TAN500)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkBulkBulkBulk
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)200°C (TJ)230°C (TJ)200°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max30 A15 A40 A50 A
Dc Current Gain Hfe Min IC Vce10 @ 1A, 5V10 @ 1A, 5V10 @ 1A, 5V20 @ 1A, 5V
Frequency Transition960MHz ~ 1.215GHz960MHz ~ 1.215GHz960MHz ~ 1.215GHz960MHz ~ 1.215GHz
Gain6.2db ~ 7dB7dB7dB ~ 7.5dB9dB
Power Max575 W583 W1450 W2500 W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max60 V55 V65 V75 V
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