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Microsemi TAN500 RF BJT

TAN500 by Microsemi · RF BJT · 55ST

In StockMicrosemi55ST
TAN500 55ST package illustration

Same model may have multiple batches, images only for reference.

TAN500
Manufacturer
Part Number (MPN)
TAN500
Package
55ST
Lifecycle Status
Obsolete
Datasheet
PDF TAN500 Datasheet
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Technical Specifications

Microsemi TAN500 RF BJT technical specifications.

General

RoHS
Compliant
Number of Pins
3
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
75 V
Collector Emitter Voltage Vceo
65 V
Current Collector IC Max
50 A
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V

Alternate Parts Comparison (TAN500 vs TAN150A vs TAN350 vs TAN150)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkBulkBulkBulk
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Mounting TypeChassis Mount--Chassis MountChassis Mount
Operating Temperature200°C (TJ)--230°C (TJ)200°C (TJ)
Current Collector IC Max50 A--40 A15 A
Dc Current Gain Hfe Min IC Vce20 @ 1A, 5V--10 @ 1A, 5V10 @ 1A, 5V
Frequency Transition960MHz ~ 1.215GHz--960MHz ~ 1.215GHz960MHz ~ 1.215GHz
Gain9dB--7dB ~ 7.5dB7dB
Power Max2500 W--1450 W583 W
Transistor TypeNPN--NPNNPN
Voltage Collector Emitter Breakdown Max75 V--65 V55 V
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