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Microsemi 1214-55 RF BJT

1214-55 by Microsemi · RF BJT · 55AW

In StockMicrosemi55AW
1214-55 55AW package illustration

Same model may have multiple batches, images only for reference.

1214-55
Manufacturer
Part Number (MPN)
1214-55
Package
55AW
Lifecycle Status
Obsolete
Datasheet
PDF 1214-55 Datasheet
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Technical Specifications

Microsemi 1214-55 RF BJT technical specifications.

General

Package / Case
55AW
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Power Max
175W
Transistor Type
NPN
Current Collector IC Max
8A
Voltage Collector Emitter Breakdown Max
50V
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Frequency Transition
1.2GHz ~ 1.4GHz

Alternate Parts Comparison (1214-55 vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case55AWM220M135M150
Mounting TypeChassis MountChassis MountChassis MountSurface Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max8A250mA5A30A
Dc Current Gain Hfe Min IC Vce20 @ 1A, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition1.2GHz ~ 1.4GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain7dB9dB7.6dB17dB
Power Max175W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max50V45V35V15V
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