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Microsemi MDS140L RF BJT

MDS140L by Microsemi · RF BJT · 55AW

In StockMicrosemi55AW
MDS140L 55AW package illustration

Same model may have multiple batches, images only for reference.

MDS140L
Manufacturer
Part Number (MPN)
MDS140L
Package
55AW
Lifecycle Status
Obsolete
Datasheet
PDF MDS140L Datasheet
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Technical Specifications

Microsemi MDS140L RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
12 A
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Frequency Transition
1.03GHz ~ 1.09GHz
Gain
9.5dB
Power Max
500 W
Transistor Type
NPN

Related Parts Comparison (MDS140L vs MDS150 vs MDS500L vs MDS1100)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeChassis Mount--Chassis MountSurface Mount
Operating Temperature200°C (TJ)--200°C (TJ)200°C (TJ)
Lifecycle StatusObsolete--ObsoleteObsolete
Current Collector IC Max12 A--24A100 A
Dc Current Gain Hfe Min IC Vce20 @ 1A, 5V--20 @ 1A, 5V20 @ 5A, 5V
Frequency Transition1.03GHz ~ 1.09GHz--1.03GHz ~ 1.09GHz1.03 GHz
Gain9.5dB--9.2dB8.9dB
Power Max500 W--833W8750 W
Transistor TypeNPN--NPNNPN
Voltage Collector Emitter Breakdown Max70 V--70V65 V
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