Microsemi TAN350 RF BJT
TAN350 by Microsemi · RF BJT · 55ST
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TAN350
Package
55ST
Lifecycle Status
Obsolete
Datasheet
TAN350 Datasheet
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Technical Specifications
Microsemi TAN350 RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
230°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V
Frequency Transition
960MHz ~ 1.215GHz
Gain
7dB ~ 7.5dB
Power Max
1450 W
Transistor Type
NPN
Related Parts Comparison (TAN350 vs TAN150A vs TAN15 vs TAN250A)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | Bulk | Bulk | Bulk | Bulk |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Mounting Type | Chassis Mount | -- | Chassis Mount | Chassis Mount |
| Operating Temperature | 230°C (TJ) | -- | 200°C (TJ) | 200°C (TJ) |
| Current Collector IC Max | 40 A | -- | 2 A | 30 A |
| Frequency Transition | 960MHz ~ 1.215GHz | -- | 960MHz ~ 1.215GHz | 960MHz ~ 1.215GHz |
| Gain | 7dB ~ 7.5dB | -- | 7dB ~ 8dB | 6.2db ~ 7dB |
| Power Max | 1450 W | -- | 175 W | 575 W |
| Transistor Type | NPN | -- | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 65 V | -- | 50 V | 60 V |
| Action |
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