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Microsemi MS1001 RF BJT

RF TRANS NPN 18V 30MHZ M174

In Stock ActiveMicrosemiM174
MS1001 - No Image Available

Same model may have multiple batches, images only for reference.

MS1001
Manufacturer
Part Number (MPN)
MS1001
Detailed Description
RF TRANS NPN 18V 30MHZ M174
Package
M174
Lifecycle Status
Active
Datasheet
PDF MS1001 Datasheet
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Technical Specifications

Microsemi MS1001 RF BJT technical specifications.

General

Package / Case
M174
Packaging
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Voltage Collector Emitter Breakdown Max
18V
Transistor Type
NPN
Power Max
270W
Gain
13dB
Frequency Transition
30MHz
Dc Current Gain Hfe Min IC Vce
20 @ 5A, 5V

Alternate Parts Comparison (MS1001 vs MS2348 vs MS2392 vs MS2584)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseM174------
Mounting TypeChassis Mount------
Operating Temperature200°C (TJ)------
Current Collector IC Max20A------
Dc Current Gain Hfe Min IC Vce20 @ 5A, 5V------
Frequency Transition30MHz------
Gain13dB------
Power Max270W------
Transistor TypeNPN------
Voltage Collector Emitter Breakdown Max18V------
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