Microsemi JTDB75 RF BJT
JTDB75 by Microsemi · RF BJT · 55AW
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JTDB75
Package
55AW
Lifecycle Status
Obsolete
Datasheet
JTDB75 Datasheet
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Technical Specifications
Microsemi JTDB75 RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
8 A
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Frequency Transition
960MHz ~ 1.215GHz
Gain
7dB ~ 8.2dB
Power Max
220 W
Transistor Type
NPN
Alternate Parts Comparison (JTDB75 vs JTDB25 vs MS2201 vs SD1224)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | Bulk | -- | M220 | M135 |
| Mounting Type | Chassis Mount | -- | Chassis Mount | Chassis Mount |
| Operating Temperature | 200°C (TJ) | -- | 200°C (TJ) | 200°C (TJ) |
| Current Collector IC Max | 8 A | -- | 250mA | 5A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 1A, 5V | -- | 0.95 @ 10mA, 5V | 20 @ 500mA, 5V |
| Frequency Transition | 960MHz ~ 1.215GHz | -- | 1.025GHz ~ 1.15GHz | 175MHz |
| Gain | 7dB ~ 8.2dB | -- | 9dB | 7.6dB |
| Power Max | 220 W | -- | 10W | 60W |
| Transistor Type | NPN | -- | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 55 V | -- | 45V | 35V |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.