Microsemi MDS60L RF BJT
MDS60L by Microsemi · RF BJT · 55AW
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MDS60L
Package
55AW
Lifecycle Status
Obsolete
Datasheet
MDS60L Datasheet
Quick Jump:
Technical Specifications
Microsemi MDS60L RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
4 A
Dc Current Gain Hfe Min IC Vce
20 @ 500mA, 5V
Frequency Transition
1.03GHz ~ 1.09GHz
Gain
10dB
Power Max
120 W
Transistor Type
NPN
Alternate Parts Comparison (MDS60L vs MDS150 vs MDS500L vs MDS1100)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Chassis Mount | -- | Chassis Mount | Surface Mount |
| Operating Temperature | 200°C (TJ) | -- | 200°C (TJ) | 200°C (TJ) |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Current Collector IC Max | 4 A | -- | 24A | 100 A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 500mA, 5V | -- | 20 @ 1A, 5V | 20 @ 5A, 5V |
| Frequency Transition | 1.03GHz ~ 1.09GHz | -- | 1.03GHz ~ 1.09GHz | 1.03 GHz |
| Gain | 10dB | -- | 9.2dB | 8.9dB |
| Power Max | 120 W | -- | 833W | 8750 W |
| Transistor Type | NPN | -- | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 65 V | -- | 70V | 65 V |
| Action |
More Parts in RF BJT
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