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Microsemi TAN150 RF BJT

TAN150 by Microsemi · RF BJT · 55AT

In StockMicrosemi55AT
TAN150 55AT package illustration

Same model may have multiple batches, images only for reference.

TAN150
Manufacturer
Part Number (MPN)
TAN150
Package
55AT
Lifecycle Status
Obsolete
Datasheet
PDF TAN150 Datasheet
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Technical Specifications

Microsemi TAN150 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
15 A
Dc Current Gain Hfe Min IC Vce
10 @ 1A, 5V
Frequency Transition
960MHz ~ 1.215GHz
Gain
7dB
Power Max
583 W
Transistor Type
NPN

Related Parts Comparison (TAN150 vs TAN150A vs TAN15 vs TAN250A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBulkBulkBulkBulk
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Mounting TypeChassis Mount--Chassis MountChassis Mount
Operating Temperature200°C (TJ)--200°C (TJ)200°C (TJ)
Current Collector IC Max15 A--2 A30 A
Frequency Transition960MHz ~ 1.215GHz--960MHz ~ 1.215GHz960MHz ~ 1.215GHz
Gain7dB--7dB ~ 8dB6.2db ~ 7dB
Power Max583 W--175 W575 W
Transistor TypeNPN--NPNNPN
Voltage Collector Emitter Breakdown Max55 V--50 V60 V
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