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Microsemi MS2201 RF BJT

TRANS RF BIPO 10W 250MA M220

4,014 ActiveMicrosemiM220RoHS
MS2201 - No Image Available

Same model may have multiple batches, images only for reference.

MS2201
Manufacturer
Part Number (MPN)
MS2201
Detailed Description
TRANS RF BIPO 10W 250MA M220
Package
M220
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MS2201 Datasheet
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Technical Specifications

Microsemi MS2201 RF BJT technical specifications.

General

Package / Case
M220
Packaging
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Voltage Collector Emitter Breakdown Max
45V
Transistor Type
NPN
Power Max
10W
Gain
9dB
Frequency Transition
1.025GHz ~ 1.15GHz
Detailed Description
RF Transistor NPN 45V 250mA 1.025GHz ~ 1.15GHz 10W Chassis Mount M220

Alternate Parts Comparison (MS2201 vs MS2348 vs MS2392 vs MS2584)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseM220------
Mounting TypeChassis Mount------
Operating Temperature200°C (TJ)------
Current Collector IC Max250mA------
Dc Current Gain Hfe Min IC Vce0.95 @ 10mA, 5V------
Detailed DescriptionRF Transistor NPN 45V 250mA 1.025GHz ~ 1.15GHz 10W Chassis Mount M220------
Frequency Transition1.025GHz ~ 1.15GHz------
Gain9dB------
Power Max10W------
Transistor TypeNPN------
Voltage Collector Emitter Breakdown Max45V------
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