onsemi NJVNJD35N04T4G BJTs
4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVNJD35N04T4G
Detailed Description
4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252
Lifecycle Status
Active
Datasheet
NJVNJD35N04T4G Datasheet
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Technical Specifications
onsemi NJVNJD35N04T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
2000 @ 2A, 2V
Power Max
45 W
Frequency Transition
90MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
350 V
Alternate Parts Comparison (NJVNJD35N04T4G vs NJVNJD2873T4G vs NJVNJD2873T4G-VF01 vs NJVNJD1718T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Obsolete | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 50 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 50 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 300 mV | -- | -- |
| Collector Emitter Voltage Vceo | -- | 50 V | -- | -- |
| Contact Plating | -- | Tin | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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