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onsemi NJVMJD3055T4G BJTs

10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

150,000 ActiveonsemiTO-252$0.86
NJVMJD3055T4G TO-252 package illustration

Same model may have multiple batches, images only for reference.

NJVMJD3055T4G
Manufacturer
Part Number (MPN)
NJVMJD3055T4G
Detailed Description
10 A, 60 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252
Lifecycle Status
Active
Datasheet
PDF NJVMJD3055T4G Datasheet
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Technical Specifications

onsemi NJVMJD3055T4G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
20 @ 4A, 4V
Power Max
1.75 W
Frequency Transition
2MHz
Transistor Type
NPN
Current Collector IC Max
10 A

Alternate Parts Comparison (NJVMJD3055T4G vs NJVMJD148T4G vs NJVMJD340T4G vs NJVMJD2955T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max50µA20µA (ICBO)100µA50µA
Current Collector IC Max10 A4 A500 mA10 A
Dc Current Gain Hfe Min IC Vce20 @ 4A, 4V85 @ 500mA, 1V30 @ 50mA, 10V20 @ 4A, 4V
Frequency Transition2MHz3MHz10MHz2MHz
PackageDPAK-3DPAK-3DPAK-3DPAK-3
Power Max1.75 W1.75 W1.56 W1.75 W
Transistor TypeNPNNPNNPNPNP
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