onsemi MJD42CT4G BJTs
PNP BJT Power Transistor, 100V, 6A, DPAK TO-252
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD42CT4G
Detailed Description
PNP BJT Power Transistor, 100V, 6A, DPAK TO-252
Package
TO-252
Lifecycle Status
Active
Datasheet
MJD42CT4G Datasheet
Quick Jump:
Technical Specifications
onsemi MJD42CT4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
1.75 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD42CT4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 6 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 15 @ 3A, 4V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.75 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | PNP | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 1.5V @ 600mA, 6A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 100 V | 60 V | 45 V | 25 V |
| Frequency Transition | 3MHz | -- | 3MHz | 65MHz |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
NJVNJD35N04T4Gonsemi4.0 A, 350 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL