onsemi NJVMJD350T4G BJTs
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVMJD350T4G
Detailed Description
0.5 A, 300 V High Voltage PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252
Lifecycle Status
Active
Datasheet
NJVMJD350T4G Datasheet
Quick Jump:
Technical Specifications
onsemi NJVMJD350T4G BJTs technical specifications.
General
Series
MJD350
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 50mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
PNP
Alternate Parts Comparison (NJVMJD350T4G vs NJVMJD148T4G vs NJVMJD340T4G vs NJVMJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100µA | 20µA (ICBO) | 100µA | 50µA |
| Current Collector IC Max | 500 mA | 4 A | 500 mA | 10 A |
| Dc Current Gain Hfe Min IC Vce | 30 @ 50mA, 10V | 85 @ 500mA, 1V | 30 @ 50mA, 10V | 20 @ 4A, 4V |
| Frequency Transition | 10MHz | 3MHz | 10MHz | 2MHz |
| Package | DPAK-3 | DPAK-3 | DPAK-3 | DPAK-3 |
| Power Max | 1.56 W | 1.75 W | 1.56 W | 1.75 W |
| Transistor Type | PNP | NPN | NPN | NPN |
| Action |
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