onsemi NJVNJD2873T4G BJTs
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVNJD2873T4G
Detailed Description
Reliable BJTs by onsemi, engineered for high-performance systems.
Package
DPAK
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
NJVNJD2873T4G Datasheet
Quick Jump:
Technical Specifications
onsemi NJVNJD2873T4G BJTs technical specifications.
General
RoHS
Compliant
Number of Pins
3
Packaging
Tape and Reel
Operating Temperature
-65 °C ~ 175 °C
Lifecycle Status
Production
Export Control Classification Number ECCN Code
EAR99
Introduction Date
2004-06-28
Manufacturer Lifecycle Status
ACTIVE
Package
DPAK
Contact Plating
Tin
Alternate Parts Comparison (NJVNJD2873T4G vs NJVNJD35N04T4G vs NJVNJD2873T4G-VF01 vs NJVNJD1718T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65 °C ~ 175 °C | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| RoHS | Compliant | -- | -- | -- |
| Lifecycle Status | Production | -- | -- | -- |
| China ROHS | Non-Compliant | -- | -- | -- |
| Collector Base Voltage Vcbo | 50 V | -- | -- | -- |
| Collector Emitter Breakdown Voltage | 50 V | -- | -- | -- |
| Collector Emitter Saturation Voltage | 300 mV | -- | -- | -- |
| Collector Emitter Voltage Vceo | 50 V | -- | -- | -- |
| Contact Plating | Tin | -- | -- | -- |
| Element Configuration | Single | -- | -- | -- |
| Emitter Base Voltage Vebo | 5 V | -- | -- | -- |
| Action |
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