onsemi MJD148T4G BJTs

Name: MJD148T4G
Brand: onsemi
SKU: MJD148T4G
Price: 0.5405 USD
Availability: InStock

4 A, 45 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

135,000 ActiveonsemiTO-252$0.54

Same model may have multiple batches, images only for reference.

MJD148T4G

Manufacturer

onsemi

Part Number (MPN)

MJD148T4G

Technical Specifications

onsemi MJD148T4G BJTs technical specifications.

General

RoHS

Yes

Package / Case

TO-252-3, DPAK

Mounting Type

Surface Mount

Operating Temperature

-65°C ~ 150°C (TJ)

Lifecycle Status

Active

Dc Current Gain Hfe Min IC Vce

85 @ 500mA, 1V

Power Max

1.75 W

Frequency Transition

3MHz

Transistor Type

NPN

Current Collector IC Max

4 A

Alternate Parts Comparison (MJD148T4G vs MJD3055T4G vs MJD210T4G vs MJD42CT4G)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemiMJD148T4G	onsemiMJD3055T4G	onsemiMJD210T4G	onsemiMJD42CT4G
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Lifecycle Status	Active	Production	Active	Active
Current Collector Cutoff Max	20µA (ICBO)	50µA	100nA (ICBO)	50µA
Current Collector IC Max	4 A	10 A	5 A	6 A
Dc Current Gain Hfe Min IC Vce	85 @ 500mA, 1V	20 @ 4A, 4V	45 @ 2A, 1V	15 @ 3A, 4V
Power Max	1.75 W	1.75 W	1.4 W	1.75 W
Transistor Type	NPN	NPN	PNP	PNP
Vce Saturation Max Ib IC	500mV @ 200mA, 2A	8V @ 3.3A, 10A	1.8V @ 1A, 5A	1.5V @ 600mA, 6A
Voltage Collector Emitter Breakdown Max	45 V	60 V	25 V	100 V
Frequency Transition	3MHz	--	65MHz	3MHz
Action	RFQ	RFQ	RFQ	RFQ

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