onsemi MJD5731T4G BJTs
350V PNP BJT Power Transistor, 1A, TO-252
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD5731T4G
Detailed Description
350V PNP BJT Power Transistor, 1A, TO-252
Package
TO-252
Lifecycle Status
Active
Datasheet
MJD5731T4G Datasheet
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Technical Specifications
onsemi MJD5731T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
350 V
Alternate Parts Comparison (MJD5731T4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 100µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 1 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 30 @ 300mA, 10V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.56 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | PNP | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 1V @ 200mA, 1A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 350 V | 60 V | 45 V | 25 V |
| Frequency Transition | 10MHz | -- | 3MHz | 65MHz |
| Action |
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