onsemi MJD5731T4G BJTs
350V PNP BJT Power Transistor, 1A, TO-252
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD5731T4G
Detailed Description
350V PNP BJT Power Transistor, 1A, TO-252
Package
TO-252
Lifecycle Status
Active
Datasheet
MJD5731T4G Datasheet
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Technical Specifications
onsemi MJD5731T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
350 V
Alternate Parts Comparison (MJD5731T4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 60 V | -- | -- |
| Current Rating | -- | 10 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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