onsemi NJVNJD1718T4G BJTs
2.0 A, 50 V PNP Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVNJD1718T4G
Detailed Description
2.0 A, 50 V PNP Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
NJVNJD1718T4G Datasheet
Quick Jump:
Technical Specifications
onsemi NJVNJD1718T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
70 @ 500mA, 2V
Power Max
1.68 W
Frequency Transition
80MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
50 V
Alternate Parts Comparison (NJVNJD1718T4G vs NJVNJD2873T4G vs NJVNJD35N04T4G vs NJVNJD2873T4G-VF01)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Obsolete |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 50 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 50 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 300 mV | -- | -- |
| Collector Emitter Voltage Vceo | -- | 50 V | -- | -- |
| Contact Plating | -- | Tin | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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