onsemi MJD200RLG BJTs

Name: MJD200RLG
Brand: onsemi
SKU: MJD200RLG
Price: 0.5082 USD
Availability: InStock

5A 25V NPN BJT Power Transistor TO-252

129,600 ActiveonsemiTO-252$0.51

Same model may have multiple batches, images only for reference.

MJD200RLG

Manufacturer

onsemi

Part Number (MPN)

MJD200RLG

Technical Specifications

onsemi MJD200RLG BJTs technical specifications.

General

RoHS

Yes

Package / Case

TO-252-3, DPAK

Mounting Type

Surface Mount

Operating Temperature

-65°C ~ 150°C (TJ)

Lifecycle Status

Active

Dc Current Gain Hfe Min IC Vce

45 @ 2A, 1V

Power Max

1.4 W

Frequency Transition

65MHz

Transistor Type

NPN

Current Collector IC Max

5 A

Alternate Parts Comparison (MJD200RLG vs MJD3055T4G vs MJD148T4G vs MJD210T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemiMJD200RLG	onsemiMJD3055T4G	onsemiMJD148T4G	onsemiMJD210T4G
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Lifecycle Status	Active	Production	Active	Active
Current Collector Cutoff Max	100nA (ICBO)	50µA	20µA (ICBO)	100nA (ICBO)
Current Collector IC Max	5 A	10 A	4 A	5 A
Dc Current Gain Hfe Min IC Vce	45 @ 2A, 1V	20 @ 4A, 4V	85 @ 500mA, 1V	45 @ 2A, 1V
Power Max	1.4 W	1.75 W	1.75 W	1.4 W
Transistor Type	NPN	NPN	NPN	PNP
Vce Saturation Max Ib IC	1.8V @ 1A, 5A	8V @ 3.3A, 10A	500mV @ 200mA, 2A	1.8V @ 1A, 5A
Voltage Collector Emitter Breakdown Max	25 V	60 V	45 V	25 V
RoHS	Yes	Compliant	Yes	--
Action	RFQ	RFQ	RFQ	RFQ

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