Nexperia PSMN4R3-30PL MOSFETs
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 30V and continuous drain current of 100A.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN4R3-30PL MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN4R3-30PL vs PSMN4R3-40MLHX vs PSMN4R3-30PL,127 vs PSMN1R8-40YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 5 |
| RoHS | Yes with Exemption | -- | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single Triple Source |
| Jedec | TO-220AB | -- | TO-220AB | MO-235 |
| Action |
Nexperia PSMN4R3-30PL MOSFETs Overview
N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 30V and continuous drain current of 100A. Features low drain-source on-resistance of 4.3mΩ at 10V. Housed in a TO-220AB package for through-hole mounting, this single-element transistor offers a maximum power dissipation of 103W and operates across a wide temperature range from -55°C to 175°C.
Typical gate charge is 41.5nC at 10V, with input capacitance of 2400pF at 12V.
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