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Nexperia PSMN01560PS MOSFETs

N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current.

In Stock ActiveNexperiaTO-220ABRoHS
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PSMN01560PS
Manufacturer
Part Number (MPN)
PSMN01560PS
Detailed Description
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 14.8 mOhm at 10V. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 20.9 nC at 10V, and a typical input capacitance of 1220 pF at 30V. Maximum power dissipation reaches 86000 mW, with an operating temperature...
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN01560PS Datasheet
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Technical Specifications

Nexperia PSMN01560PS MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)

Alternate Parts Comparison (PSMN01560PS vs PSMN5R0-80PS,127 vs PSMN4R3-30PL,127 vs PSMN012-80PS)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
RoHSYes with ExemptionYes with ExemptionYes with ExemptionYes with Exemption
AEC QualifiedNoNoNoNo
AutomotiveNoNoNoNo
Cage CodeH2HX9H2HX9H2HX9H2HX9
CategoryPower MOSFETPower MOSFETPower MOSFETPower MOSFET
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
JedecTO-220ABTO-220ABTO-220ABTO-220AB
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Nexperia PSMN01560PS MOSFETs Overview

N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 14.8 mOhm at 10V. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 20.9 nC at 10V, and a typical input capacitance of 1220 pF at 30V.

Maximum power dissipation reaches 86000 mW, with an operating temperature...

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