Nexperia PSMN01560PS MOSFETs
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current.

Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN01560PS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN01560PS vs PSMN5R0-80PS,127 vs PSMN4R3-30PL,127 vs PSMN012-80PS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| RoHS | Yes with Exemption | Yes with Exemption | Yes with Exemption | Yes with Exemption |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Jedec | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Action |
Nexperia PSMN01560PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 14.8 mOhm at 10V. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 20.9 nC at 10V, and a typical input capacitance of 1220 pF at 30V.
Maximum power dissipation reaches 86000 mW, with an operating temperature...