Nexperia PSMN013-100PS MOSFETs
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 68A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN013-100PS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN013-100PS vs PSMN013-60YLX vs PSMN013-30MLC,115 vs PSMN013-30MLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | -- |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| RoHS | Yes with Exemption | -- | -- | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Cage Code | H2HX9 | -- | -- | -- |
| Category | Power MOSFET | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Channel Type | N | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Jedec | TO-220AB | -- | -- | -- |
| Action |
Nexperia PSMN013-100PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 68A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low 13.9mΩ drain-source resistance at 10V. Key electrical characteristics include a typical gate charge of 59nC at 10V and input capacitance of 3195pF at 50V.
Maximum power dissipation reaches 170W, with an operating temperature range from -55°C to 175°C.
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PSMN013-30MLC,115NXP SemiconductorsPSMN013-30MLC,115Nexperia