Nexperia PSMN4R3-30PL,127 MOSFETs
N-channel Power MOSFET, TO-220AB package, featuring 30V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN4R3-30PL,127
Base Model
Detailed Description
N-channel Power MOSFET, TO-220AB package, featuring 30V drain-source voltage and 100A continuous drain current. This single-element enhancement mode transistor offers a low 4.3mΩ drain-source resistance at 10V gate-source voltage. With a maximum power dissipation of 103W and a wide operating temperature range of -55°C to 175°C, it is designed for through-hole mounting.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN4R3-30PL,127 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN4R3-30PL,127 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)
Alternate Parts Comparison (PSMN4R3-30PL,127 vs PSMN4R3-40MLHX vs PSMN4R3-30PL vs PSMN050-80PS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Number of Pins | 3 | -- | 3 | 3 |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Power MOSFET | Power MOSFET |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | N | N |
| Configuration | Single | -- | Single | Single |
| Jedec | TO-220AB | -- | TO-220AB | TO-220AB |
| Maximum Continuous Drain Current | 100A | -- | 100A | 22A |
| Action |
Nexperia PSMN4R3-30PL,127 MOSFETs Overview
N-channel Power MOSFET, TO-220AB package, featuring 30V drain-source voltage and 100A continuous drain current. This single-element enhancement mode transistor offers a low 4.3mΩ drain-source resistance at 10V gate-source voltage. With a maximum power dissipation of 103W and a wide operating temperature range of -55°C to 175°C, it is designed for through-hole mounting.
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