Nexperia PSMN7R0-100PS,127 MOSFETs
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN7R0-100PS,127
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 100A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting. Key specifications include a maximum drain-source on-resistance of 6.8 mOhm at 10V, a typical gate charge of 125 nC, and a maximum power dissipation of 269W. Operating temperature range spans from -55°C to 175°C.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN7R0-100PS,127 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN7R0-100PS,127 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)
Alternate Parts Comparison (PSMN7R0-100PS,127 vs PSMN7R0-30MLC,115 vs PSMN7R0-30YL,115 vs PSMN7R0-60YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 3 | -- | -- | 5 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single | -- | -- | Single Triple Source |
| Jedec | TO-220AB | -- | -- | MO-235 |
| Action |
Nexperia PSMN7R0-100PS,127 MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 100A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting. Key specifications include a maximum drain-source on-resistance of 6.8 mOhm at 10V, a typical gate charge of 125 nC, and a maximum power dissipation of 269W.
Operating temperature range spans from -55°C to 175°C.
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PSMN7R0-100PSNexperiaN-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 100A continuous drain current.