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Nexperia PSMN5R0-80PS,127 MOSFETs

N-channel Power MOSFET featuring 80V drain-source voltage and 100A continuous drain current.

26,860 ActiveNexperiaPSMN5R0TO-220AB$2.29RoHS
PSMN5R0-80PS,127 - No Image Available

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PSMN5R0-80PS,127
Manufacturer
Part Number (MPN)
PSMN5R0-80PS,127
Base Model
Detailed Description
N-channel Power MOSFET featuring 80V drain-source voltage and 100A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-220AB package with through-hole mounting. Key specifications include a maximum drain-source resistance of 4.7 mOhm at 10V, a typical gate charge of 101 nC at 10V, and a typical input capacitance of 6793 pF at 12V. Maximum power dissipation reaches 270,000 mW, with an operating temperature range from -55°C to 175°C.
Package
TO-220AB
Key Features
Package: TO-220AB
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF PSMN5R0-80PS,127 Datasheet
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Ordering Code Family

PSMN5R0 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Nexperia PSMN5R0-80PS,127 MOSFETs technical specifications.

General

RoHS
Yes with Exemption
Number of Pins
3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C
Package
TO-220AB
Pcb
3
Tab
Tab
Package Length Mm
10.3(Max)
Package Width Mm
4.7(Max)
Package Height Mm
9.4(Max)

Alternate Parts Comparison (PSMN5R0-80PS,127 vs PSMN5R0-100XS vs PSMN5R0-100XS,127 vs PSMN050-80PS)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C
Number of Pins3333
AEC QualifiedNoNoNoNo
AutomotiveNoNoNoNo
Cage CodeH2HX9H2HX9H2HX9H2HX9
CategoryPower MOSFETPower MOSFETPower MOSFETPower MOSFET
Channel ModeEnhancementEnhancementEnhancementEnhancement
Channel TypeNNNN
ConfigurationSingleSingleSingleSingle
JedecTO-220ABTO-220-FTO-220-FTO-220AB
Maximum Continuous Drain Current100A67.5A67.5A22A
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Nexperia PSMN5R0-80PS,127 MOSFETs Overview

N-channel Power MOSFET featuring 80V drain-source voltage and 100A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-220AB package with through-hole mounting. Key specifications include a maximum drain-source resistance of 4.7 mOhm at 10V, a typical gate charge of 101 nC at 10V, and a typical input capacitance of 6793 pF at 12V.

Maximum power dissipation reaches 270,000 mW, with an operating temperature range from -55°C to 175°C.

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