Nexperia PSMN012-80PS MOSFETs
N-channel enhancement mode power MOSFET featuring 80V drain-source voltage and 74A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN012-80PS MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN012-80PS vs PSMN012-60YS,115 vs PSMN012-60YS,115 vs PSMN012-100YS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 3 | -- | -- | 5 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single | -- | -- | Single Triple Source |
| Jedec | TO-220AB | -- | -- | MO-235 |
| Action |
Nexperia PSMN012-80PS MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 80V drain-source voltage and 74A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 11mΩ at 10V. Key electrical characteristics include a maximum gate-source voltage of 20V and typical gate charge values of 36nC or 43nC at 10V.
With a maximum power dissipation of 148W and an operating temperature range of -55°C to 175°C, this componen...
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