Nexperia PSMN1R8-40YLC,115 MOSFETs
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN1R8-40YLC,115
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. This surface-mount component utilizes LFPAK packaging with 5 pins (4+Tab) and a 1.8mOhm maximum drain-source resistance at 10V. Process technology enables a maximum power dissipation of 272W, with operating temperatures ranging from -55°C to 175°C.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Production
RoHS State
Yes with Exemption
Datasheet
PSMN1R8-40YLC,115 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN1R8-40YLC,115 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Lifecycle Status
Production
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Related Parts Comparison (PSMN1R8-40YLC,115 vs PSMN1R8-40YLC,115 vs PSMN1R8-30MLHX vs PSMN1R8-40YLC)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes with Exemption | Yes | Yes | Yes with Exemption |
| Package | LFPAK | SOT-669-5 | LFPAK33 | LFPAK |
| Mounting Type | Surface Mount | -- | SMD/SMT | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | - 55°C ~ + 175°C | -55°C ~ 175°C |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | N | -- | N |
| Configuration | Single Triple Source | -- | Single | Single Triple Source |
| Action |
Nexperia PSMN1R8-40YLC,115 MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. This surface-mount component utilizes LFPAK packaging with 5 pins (4+Tab) and a 1.8mOhm maximum drain-source resistance at 10V. Process technology enables a maximum power dissipation of 272W, with operating temperatures ranging from -55°C to 175°C.
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