Nexperia PSMN1R8-40YLC,115 MOSFETs
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN1R8-40YLC,115
Base Model
Detailed Description
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. This surface-mount component utilizes LFPAK packaging with 5 pins (4+Tab) and a 1.8mOhm maximum drain-source resistance at 10V. Process technology enables a maximum power dissipation of 272W, with operating temperatures ranging from -55°C to 175°C.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN1R8-40YLC,115 Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN1R8-40YLC,115 MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)
Alternate Parts Comparison (PSMN1R8-40YLC,115 vs PSMN1R8-40YLC,115 vs PSMN1R8-30MLHX vs PSMN1R8-40YLC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | -- | -55°C ~ 175°C |
| Number of Pins | 5 | -- | -- | 5 |
| RoHS | Yes with Exemption | -- | -- | Yes with Exemption |
| AEC Qualified | No | -- | -- | No |
| Automotive | No | -- | -- | No |
| Cage Code | H2HX9 | -- | -- | H2HX9 |
| Category | Power MOSFET | -- | -- | Power MOSFET |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Channel Type | N | -- | -- | N |
| Configuration | Single Triple Source | -- | -- | Single Triple Source |
| Jedec | MO-235 | -- | -- | MO-235 |
| Action |
Nexperia PSMN1R8-40YLC,115 MOSFETs Overview
N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. This surface-mount component utilizes LFPAK packaging with 5 pins (4+Tab) and a 1.8mOhm maximum drain-source resistance at 10V. Process technology enables a maximum power dissipation of 272W, with operating temperatures ranging from -55°C to 175°C.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN1R8-40YLC,115NXP SemiconductorsTrans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK / N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower tec…
PSMN1R8-30MLHXNexperiaPSMN1R8-30MLH - N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
PSMN1R8-40YLCNexperiaN-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current.
PSMN026-80YS,115NexperiaN-channel enhancement mode power MOSFET in a 5-pin LFPAK surface mount package (JEDEC MO-235).