Nexperia PSMN013-100PS,127 MOSFETs
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 68A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PSMN013-100PS,127 MOSFETs technical specifications.
General
Alternate Parts Comparison (PSMN013-100PS,127 vs PSMN013-60YLX vs PSMN013-30MLC,115 vs PSMN013-30MLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes with Exemption | Yes | Yes | Yes |
| Channel Type | N | N | N | N |
| Package | TO-220AB | SOT-669-5 | LFPAK-33-8 | LFPAK-33-8 |
| Lifecycle Status | -- | Production | Production | Production |
| Automotive Qualified | -- | N | N | N |
| Chemical Content | -- | PSMN013-60YL | PSMN013-30MLC | PSMN013-30MLC |
| Ciss Typ Pf | -- | 1952 | 519 | 519 |
| Coss Typ Pf | -- | 182 | 131 | 131 |
| Date | -- | 2015-10-12 | 2012-04-11 | 2012-04-11 |
| ID Max a | -- | 53 | 39 | 39 |
| Nr of Transistors | -- | 1 | 1 | 1 |
| Packing | -- | SOT669_115 | SOT1210_115 | SOT1210_115 |
| Action |
Nexperia PSMN013-100PS,127 MOSFETs Overview
N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 68A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting and a tab for enhanced thermal performance. Key specifications include a maximum gate-source voltage of 20V, a low drain-source on-resistance of 13.9 mOhm at 10V, and a typical gate charge of 59 nC.
Operating across a wide temperature range from -55°C to 175°C, it offers a maximum power dissipa...
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