Microsemi MDS1100 RF BJT
MDS1100 by Microsemi · RF BJT · 55TU-1
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MDS1100
Package
55TU-1
Lifecycle Status
Obsolete
Datasheet
MDS1100 Datasheet
Quick Jump:
Technical Specifications
Microsemi MDS1100 RF BJT technical specifications.
General
RoHS
Compliant
Number of Pins
3
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Voltage Vceo
65 V
Current Collector IC Max
100 A
Dc Current Gain Hfe Min IC Vce
20 @ 5A, 5V
Alternate Parts Comparison (MDS1100 vs MDS800 vs MDS150 vs MDS500L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Mounting Type | Surface Mount | -- | -- | Chassis Mount |
| Operating Temperature | 200°C (TJ) | -- | -- | 200°C (TJ) |
| Lifecycle Status | Obsolete | -- | -- | Obsolete |
| Current Collector IC Max | 100 A | -- | -- | 24A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 5A, 5V | -- | -- | 20 @ 1A, 5V |
| Frequency Transition | 1.03 GHz | -- | -- | 1.03GHz ~ 1.09GHz |
| Gain | 8.9dB | -- | -- | 9.2dB |
| Power Max | 8750 W | -- | -- | 833W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 65 V | -- | -- | 70V |
| Package / Case | Bulk | -- | -- | -- |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.