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Microsemi MDS500L RF BJT

MDS500L by Microsemi · RF BJT · 55ST

In StockMicrosemi55ST
MDS500L 55ST package illustration

Same model may have multiple batches, images only for reference.

MDS500L
Manufacturer
Part Number (MPN)
MDS500L
Package
55ST
Lifecycle Status
Obsolete
Datasheet
PDF MDS500L Datasheet
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Technical Specifications

Microsemi MDS500L RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
70V
Frequency Transition
1.03GHz ~ 1.09GHz
Gain
9.2dB
Power Max
833W
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V

Alternate Parts Comparison (MDS500L vs MDS800 vs MDS150 vs MDS70)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYes--
Package55ST55ST-155AW--
Mounting TypeChassis Mount----Chassis Mount
Operating Temperature200°C (TJ)----200°C (TJ)
Lifecycle StatusObsolete----Obsolete
Current Collector IC Max24A----5 A
Dc Current Gain Hfe Min IC Vce20 @ 1A, 5V----20 @ 500mA, 5V
Frequency Transition1.03GHz ~ 1.09GHz----1.03GHz ~ 1.09GHz
Gain9.2dB----10.3dB ~ 11.65dB
Power Max833W----225 W
Transistor TypeNPN----NPN
Voltage Collector Emitter Breakdown Max70V----65 V
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