Microsemi MDS500L RF BJT
MDS500L by Microsemi · RF BJT · 55ST
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MDS500L
Package
55ST
Lifecycle Status
Obsolete
Datasheet
MDS500L Datasheet
Quick Jump:
Technical Specifications
Microsemi MDS500L RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
70V
Frequency Transition
1.03GHz ~ 1.09GHz
Gain
9.2dB
Power Max
833W
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Alternate Parts Comparison (MDS500L vs MDS800 vs MDS150 vs MDS70)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | -- |
| Package | 55ST | 55ST-1 | 55AW | -- |
| Mounting Type | Chassis Mount | -- | -- | Chassis Mount |
| Operating Temperature | 200°C (TJ) | -- | -- | 200°C (TJ) |
| Lifecycle Status | Obsolete | -- | -- | Obsolete |
| Current Collector IC Max | 24A | -- | -- | 5 A |
| Dc Current Gain Hfe Min IC Vce | 20 @ 1A, 5V | -- | -- | 20 @ 500mA, 5V |
| Frequency Transition | 1.03GHz ~ 1.09GHz | -- | -- | 1.03GHz ~ 1.09GHz |
| Gain | 9.2dB | -- | -- | 10.3dB ~ 11.65dB |
| Power Max | 833W | -- | -- | 225 W |
| Transistor Type | NPN | -- | -- | NPN |
| Voltage Collector Emitter Breakdown Max | 70V | -- | -- | 65 V |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.