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Microsemi JANTXV2N2857UB RF BJT

JANTXV2N2857UB by Microsemi · RF BJT · UB

In StockMicrosemiUB
JANTXV2N2857UB UB package illustration

Same model may have multiple batches, images only for reference.

JANTXV2N2857UB
Manufacturer
Part Number (MPN)
JANTXV2N2857UB
Package
UB
Lifecycle Status
Obsolete
Datasheet
PDF JANTXV2N2857UB Datasheet
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Technical Specifications

Microsemi JANTXV2N2857UB RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 mA
Dc Current Gain Hfe Min IC Vce
30 @ 3mA, 1V
Gain
21dB
Noise Figure Db Typ F
4.5dB @ 450MHz
Power Max
200 mW
Transistor Type
NPN

Alternate Parts Comparison (JANTXV2N2857UB vs JANTXV2N2857 vs JANTXV2N4957UB vs JANTXV2N4957)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface Mount--Surface MountThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)---65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)
Lifecycle StatusObsolete--ObsoleteObsolete
Current Collector IC Max40 mA--30mA30 mA
Dc Current Gain Hfe Min IC Vce30 @ 3mA, 1V--30 @ 5mA, 10V30 @ 5mA, 10V
Gain21dB--25dB25dB
Noise Figure Db Typ F4.5dB @ 450MHz--3.5dB @ 450MHz3.5dB @ 450MHz
Power Max200 mW--200mW200 mW
Transistor TypeNPN--PNPPNP
Voltage Collector Emitter Breakdown Max15 V--30V30 V
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