Microsemi JAN2N4957UB RF BJT
JAN2N4957UB by Microsemi · RF BJT · UB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JAN2N4957UB
Package
UB
Lifecycle Status
Active
Datasheet
JAN2N4957UB Datasheet
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Technical Specifications
Microsemi JAN2N4957UB RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V
Gain
25dB
Noise Figure Db Typ F
3.5dB @ 450MHz
Power Max
200 mW
Transistor Type
PNP
Alternate Parts Comparison (JAN2N4957UB vs JAN2N2857 vs JAN2N2857UB vs JANTX2N2857UB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Surface Mount | -- |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -- |
| Lifecycle Status | Active | Obsolete | Obsolete | -- |
| Current Collector IC Max | 30 mA | 40mA | 40 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 30 @ 5mA, 10V | 30 @ 3mA, 1V | 30 @ 3mA, 1V | -- |
| Gain | 25dB | 12.5dB ~ 21dB @ 450MHz | 21dB | -- |
| Noise Figure Db Typ F | 3.5dB @ 450MHz | 4.5dB @ 450MHz | 4.5dB @ 450MHz | -- |
| Power Max | 200 mW | 200mW | 200 mW | -- |
| Transistor Type | PNP | NPN | NPN | -- |
| Voltage Collector Emitter Breakdown Max | 30 V | 15V | 15 V | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
Pin NoPkg NoElec Mixed
RF Transistor PNP 20V 50mA 600MHz 225mW Surface Mount SOT-23-3
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