Microsemi JAN2N2857UB RF BJT
JAN2N2857UB by Microsemi · RF BJT · UB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JAN2N2857UB
Package
UB
Lifecycle Status
Obsolete
Datasheet
JAN2N2857UB Datasheet
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Technical Specifications
Microsemi JAN2N2857UB RF BJT technical specifications.
General
Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 mA
Dc Current Gain Hfe Min IC Vce
30 @ 3mA, 1V
Gain
21dB
Noise Figure Db Typ F
4.5dB @ 450MHz
Power Max
200 mW
Transistor Type
NPN
Alternate Parts Comparison (JAN2N2857UB vs JAN2N2857 vs JAN2N4957UB vs JANTX2N2857UB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Surface Mount | -- |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) | -- |
| Lifecycle Status | Obsolete | Obsolete | Active | -- |
| Current Collector IC Max | 40 mA | 40mA | 30 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 30 @ 3mA, 1V | 30 @ 3mA, 1V | 30 @ 5mA, 10V | -- |
| Gain | 21dB | 12.5dB ~ 21dB @ 450MHz | 25dB | -- |
| Noise Figure Db Typ F | 4.5dB @ 450MHz | 4.5dB @ 450MHz | 3.5dB @ 450MHz | -- |
| Power Max | 200 mW | 200mW | 200 mW | -- |
| Transistor Type | NPN | NPN | PNP | -- |
| Voltage Collector Emitter Breakdown Max | 15 V | 15V | 30 V | -- |
| Action |
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