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Microsemi JAN2N2857UB RF BJT

JAN2N2857UB by Microsemi · RF BJT · UB

In StockMicrosemiUB
JAN2N2857UB UB package illustration

Same model may have multiple batches, images only for reference.

JAN2N2857UB
Manufacturer
Part Number (MPN)
JAN2N2857UB
Package
UB
Lifecycle Status
Obsolete
Datasheet
PDF JAN2N2857UB Datasheet
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Technical Specifications

Microsemi JAN2N2857UB RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
40 mA
Dc Current Gain Hfe Min IC Vce
30 @ 3mA, 1V
Gain
21dB
Noise Figure Db Typ F
4.5dB @ 450MHz
Power Max
200 mW
Transistor Type
NPN

Related Parts Comparison (JAN2N2857UB vs JAN2N2857 vs JAN2N4957UB vs JANTX2N2857UB)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountThrough HoleSurface Mount--
Operating Temperature-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)-65°C ~ 200°C (TJ)--
Lifecycle StatusObsoleteObsoleteActive--
Current Collector IC Max40 mA40mA30 mA--
Dc Current Gain Hfe Min IC Vce30 @ 3mA, 1V30 @ 3mA, 1V30 @ 5mA, 10V--
Gain21dB12.5dB ~ 21dB @ 450MHz25dB--
Noise Figure Db Typ F4.5dB @ 450MHz4.5dB @ 450MHz3.5dB @ 450MHz--
Power Max200 mW200mW200 mW--
Transistor TypeNPNNPNPNP--
Voltage Collector Emitter Breakdown Max15 V15V30 V--
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