Microsemi JANTXV2N4957UB RF BJT
JANTXV2N4957UB by Microsemi · RF BJT · 3-SMD,NoLead
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JANTXV2N4957UB
Package
3-SMD,NoLead
Lifecycle Status
Obsolete
Datasheet
JANTXV2N4957UB Datasheet
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Technical Specifications
Microsemi JANTXV2N4957UB RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
30V
Noise Figure Db Typ F
3.5dB @ 450MHz
Gain
25dB
Power Max
200mW
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V
Related Parts Comparison (JANTXV2N4957UB vs JANTXV2N2857 vs JANTXV2N4957 vs JANTXV2N2857UB)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | Through Hole | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) | -- | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
| Lifecycle Status | Obsolete | -- | Obsolete | Obsolete |
| Current Collector IC Max | 30mA | -- | 30 mA | 40 mA |
| Dc Current Gain Hfe Min IC Vce | 30 @ 5mA, 10V | -- | 30 @ 5mA, 10V | 30 @ 3mA, 1V |
| Gain | 25dB | -- | 25dB | 21dB |
| Noise Figure Db Typ F | 3.5dB @ 450MHz | -- | 3.5dB @ 450MHz | 4.5dB @ 450MHz |
| Power Max | 200mW | -- | 200 mW | 200 mW |
| Transistor Type | PNP | -- | PNP | NPN |
| Voltage Collector Emitter Breakdown Max | 30V | -- | 30 V | 15 V |
| Action |
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