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Microsemi JANS2N2857UB-LC RF BJT

JANS2N2857UB-LC by Microsemi · RF BJT · UB

In Stock ActiveMicrosemiUB
JANS2N2857UB-LC UB package illustration

Same model may have multiple batches, images only for reference.

JANS2N2857UB-LC
Manufacturer
Part Number (MPN)
JANS2N2857UB-LC
Package
UB
Lifecycle Status
Active
Datasheet
PDF JANS2N2857UB-LC Datasheet
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Technical Specifications

Microsemi JANS2N2857UB-LC RF BJT technical specifications.

General

Series
Military, MIL-PRF-19500/343
Package / Case
Tray
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
40 mA
Dc Current Gain Hfe Min IC Vce
30 @ 3mA, 1V
Gain
21dB
Noise Figure Db Typ F
4.5dB @ 450MHz
Power Max
200 mW

Related Parts Comparison (JANS2N2857UB-LC vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTrayM220M135M150
Mounting TypeSurface MountChassis MountChassis MountSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max40 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce30 @ 3mA, 1V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Gain21dB9dB7.6dB17dB
Power Max200 mW10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max15 V45V35V15V
Frequency Transition--1.025GHz ~ 1.15GHz175MHz5.5GHz
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