Microsemi JANTXV2N2857 RF BJT
JANTXV2N2857 by Microsemi · RF BJT · TO-72-4
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JANTXV2N2857
Package
TO-72-4
Lifecycle Status
Active
Datasheet
JANTXV2N2857 Datasheet
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Technical Specifications
Microsemi JANTXV2N2857 RF BJT technical specifications.
General
RoHS
Yes
Feature Type
NPN
Feature Configuration
Single
Feature Number of Elements Per Chip
1
Feature Maximum Collector Base Voltage V
30
Feature Maximum Collector Emitter Voltage V
15
Feature Maximum Emitter Base Voltage V
3
Feature Maximum Base Emitter Saturation Voltage V
1@1mA@10mA
Feature Maximum Dc Collector Current a
0.04
Feature Operational Bias Conditions
6V/1.5mA
Alternate Parts Comparison (JANTXV2N2857 vs JANTXV2N4957 vs JANTXV2N2857UB vs JANTXV2N4957UB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | -- | -- | Yes |
| Package | TO-72-4 | -- | -- | 3-SMD,NoLead |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Configuration | Single | -- | -- | -- |
| Feature Maximum Base Emitter Saturation Voltage V | 1@1mA@10mA | -- | -- | -- |
| Feature Maximum Collector Base Voltage V | 30 | -- | -- | -- |
| Feature Maximum Collector Emitter Saturation Voltage V | 0.4@1mA@10mA | -- | -- | -- |
| Feature Maximum Collector Emitter Voltage V | 15 | -- | -- | -- |
| Feature Maximum Dc Collector Current a | 0.04 | -- | -- | -- |
| Feature Maximum Emitter Base Voltage V | 3 | -- | -- | -- |
| Action |
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