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Microsemi 2N4957UB RF BJT

2N4957UB by Microsemi · RF BJT · UB

In Stock ActiveMicrosemiUB
2N4957UB UB package illustration

Same model may have multiple batches, images only for reference.

2N4957UB
Manufacturer
Part Number (MPN)
2N4957UB
Package
UB
Lifecycle Status
Active
Datasheet
PDF 2N4957UB Datasheet
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Technical Specifications

Microsemi 2N4957UB RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Current Collector IC Max
30 mA
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V
Gain
25dB
Noise Figure Db Typ F
3.5dB @ 450MHz
Power Max
200 mW
Transistor Type
PNP

Alternate Parts Comparison (2N4957UB vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkM220M135M150
Mounting TypeSurface MountChassis MountChassis MountSurface Mount
Operating Temperature-65°C ~ 200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max30 mA250mA5A30A
Dc Current Gain Hfe Min IC Vce30 @ 5mA, 10V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Gain25dB9dB7.6dB17dB
Power Max200 mW10W60W180W
Transistor TypePNPNPNNPNNPN
Voltage Collector Emitter Breakdown Max30 V45V35V15V
Frequency Transition--1.025GHz ~ 1.15GHz175MHz5.5GHz
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