Vishay SQS415ENW-T1_GE3 MOSFETs
Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQS415ENW-T1_GE3
Detailed Description
Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK® 1212-8W
Lifecycle Status
Active
Datasheet
SQS415ENW-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQS415ENW-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Pins
5
Number of Channels
1 Channel
Package / Case
PowerPAK® 1212-8W
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Alternate Parts Comparison (SQS415ENW-T1_GE3 vs SQS484ENW-T1_GE3 vs SQS481ENW-T1_GE3 vs SQS462EN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | SQ | SQ | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| RoHS | Yes | Yes | Yes | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 16 ns | 10 ns | 2.6 ns | -- |
| Pd Power Dissipation | 62.5 W | 62.5 W | 62.5 W | -- |
| Qg Gate Charge | 82 nC | 35 nC | 8 nC | -- |
| Rds on Drain Source Resistance | 16.1 mOhms | 6.5 mOhms | 1.095 Ohms | -- |
| Rise Time | 3.6 ns | 5 ns | 2.3 ns | -- |
| Technology | Si | Si | Si | -- |
| Action |
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