Vishay SQS481ENW-T1_GE3 MOSFETs
Trans MOSFET P-CH 150V 4.7A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQS481ENW-T1_GE3
Detailed Description
Trans MOSFET P-CH 150V 4.7A Automotive AEC-Q101 8-Pin PowerPAK 1212-W EP T/R
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SQS481ENW-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQS481ENW-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
150 V
ID Continuous Drain Current
16 A
Rds on Drain Source Resistance
1.095 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQS481ENW-T1_GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3 vs SIS782DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SQ | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 2.6 ns | -- | -- | -- |
| ID Continuous Drain Current | 16 A | -- | -- | -- |
| Maximum Operating Temperature C | + 175 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Pd Power Dissipation | 62.5 W | -- | -- | -- |
| Action |
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